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 PC716V
PC716V
..
s Features
1. High current transfer ratio ( CTR : MIN. 1 000% at I F = 1mA, V CE = 2V ) 2. High collector power dissipation ( P c : 300mW ) 3. High isolation voltage between input and output ( Viso : 5 000V rms ) 4. Recognized by UL, file No. E64380
High Sensitivity, High Output Type Photocoupler
s Outline Dimensions
0.9 0.2 6 Anode mark PC716V 5 1.2 0.3 4 6.5 0.5
g Lead forming type ( I type ) and taping reel type ( P type ) are also available. ( PC716VI/PC716VP ) gg TUV ( VDE0884 ) approved type is also available as an option.
( Unit : mm )
Internal connection diagram 6 5 4
1 1 2 3
2
3
7.12 0.5 3.7 0.5 3.5 0.5 1.5TYP.
7.62 0.3
s Applications
1. DC-DC SSRs 2. Power monitors, welding machines 3. System appliances, measuring instruments 4. Signal transmission between circuits of different potentials and impedances
3.35 0.5
0.26 0.1 = 0 to 13
0.5 0.1 2.54 0.25 1 Anode 2 Cathode 3 NC
4 Emitter 5 Collector 6 NC
s Absolute Maximum Ratings
Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature Symbol IF I FM VR P V CEO V ECO IC PC P tot V iso T opr T stg T sol Rating 50 1 6 70 35 6 200 300 350 5 000 - 25 to + 100 - 40 to + 125 260
( Ta = 25C )
Unit mA A V mW V V mA mW mW V rms C C C
Input
Output
*1 Pulse width<=100 s, Duty ratio : 0.001 *2 40 to 60% RH, AC for 1 minute *3 For 10 seconds
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. "
PC716V s Electro-optical Characteristics
Parameter Forward voltage Peak forward voltage Reverse current Terminal capacitance Collector dark current Current transfer ratio Collector-emitter saturation voltage Isolation resistance Floating capacitance Cut-off frequency Rise time Response time Fall time Symbol VF V FM IR Ct ICEO CTR V CE(sat) R ISO Cf fc tr tf Conditions IF = 10mA IFM = 0.5A VR = 4V V = 0, f = 1kHz VCE = 10V, I F = 0 IF = 1mA, V CE = 2V IF = 20mA, IC = 10mA DC500V, 40 to 60% RH V = 0, f = 1MHz VCE = 2V, I C = 10mA, R L = 100 , - 3dB V CE MIN. 1 000 5 x 1010 = 2V, I C = 20mA, R L = 100 TYP. 1.2 30 6 000 1011 0.6 3 130 60
( Ta = 25C )
MAX. 1.4 3.0 10 250 10 - 6 15 000 1.2 1.0 400 350 Unit V V A pF A % V pF kHz s s
Input
Output
Transfer characteristics
Fig. 1 Forward Current vs. Ambient Temperature
60
Fig. 2 Collector Power Dissipation vs. Ambient Temperature
350 Collector power dissipation P C ( mW ) 300 250 200 150 100 50 0 - 25
50 Forward current I F ( mA )
40
30
20
10 0 - 25
0
25
5055
75
100
125
0
Ambient temperature T a ( C )
25 50 75 100 Ambient temperature T a ( C )
125
Fig. 3 Peak Forward Current vs. Duty Ratio
10 000 5 000 Peak forward current I FM ( mA ) 2 000 Pulse width <=100s T a = 25C
Fig. 4 Forward Current vs. Forward Voltage
500 200 100 Forward current I F ( mA ) 50 20 10 5 2 1 T a = 75C 50C 25C 0C - 25C
1 000 500 200 100 50 20 10 5
5 10
-3 2
5
10
-2 2
5
10
-1 2
5
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Duty ratio
Forward voltage V F ( V )
PC716V
Fig. 5 Current Transfer Ratio vs. Forward Current
10 000 V CE = 2V T a = 25C 8 000 Collector current I C ( mA )
Fig. 6-a Collector Current vs. Collector-emitter Voltage
36 I F = 0.7mA 32 0.6mA 28 24 20 16 12 8 0.3mA 4 0 0.2mA 0 1 2 3 4 5 6 7 8 Collector-emitter voltage V CE ( V ) 9 0.1mA 10 0.4mA 0.5mA T a = 25C
Current transfer ratio CTR ( % )
6 000
4 000
2 000
0 0.1
0.2
0.5
1
F ( mA )
2
5
Forward current I
Fig. 6-b Collector Current vs. Collector-emitter Voltage
200 IF = 180 5mA 160 Collector current I C ( mA ) 140 120 100 80 1mA 60 40 20 0 0 1 2 3 4 Collector-emitter voltage V CE ( V ) 5 2mA T a = 25C P C ( MAX.)
Fig. 7 Relative Current Transfer Ratio vs. Ambient Temperature
150 I F = 1mA V CE = 2V
Relative current transfer ratio ( % )
100
50
0 - 25
0
25
50
75
100
Ambient temperature T a ( C )
Fig. 8 Collector-emitter Saturation Voltage vs. Ambient Temperature
Collector emitter saturation voltage V CE(sat) ( V ) 1.0 I F = 20mA I C = 10mA
Fig. 9 Collector Dark Current vs. Ambient Temperature
10 Collector dark current I CEO ( A ) 10 10 10 10 10 10
-3
V CE = 10V
5
-4
0.8
5
-5
0.6
5
-6
5
-7
0.4
5
-8
0.2
5
-9
5
0 - 25
0 25 50 Ambient temperature T
a
75 ( C )
100
10
- 10
- 25
0
25 50 75 Ambient temperature T a ( C )
100
PC716V
Fig.10 Response Time vs. Load Resistance
1 000 500 200 Response time ( s ) 100 50 20 10 5 2 1 2 5 10 20 50 100 200 500 1 000 - 20 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 td ts VCE = 2V I C = 20mA T a = 25C V CE = 2V tr Voltage gain A v ( dB ) tf 0 I C = 10mA Ta = 25C
Fig.11 Frequency Response
RL = 1k - 10
100
10
Load resistance RL ( )
Frequency f ( kHz )
Test Circuit for Response Time
Test Circuit for Frepuency Response
VCC Input RD RL Output
Input Output 10% RD 90% td ts tr tf
VCC RL Output
q Please refer to the chapter "Precautions for Use " .


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